Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

Liu Ting-Ting¹, Zhang Kai^{2, †}, Zhu Guang-Run², Zhou Jian-Jun², Kong Yue-Chan², Yu Xin-Xin², Chen Tang-Sheng²

(color online) Transfer characteristics of (a) planar HEMT, (b) FinFET1, and (c) FinFET2 as a function of drain voltage at V D = 1 V , 2 V, 5 V, 10 V.