Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
Liu Ting-Ting1, Zhang Kai2, †, Zhu Guang-Run2, Zhou Jian-Jun2, Kong Yue-Chan2, Yu Xin-Xin2, Chen Tang-Sheng2
       

(color online) Typical normalized ID–VD curves of (a) planar HEMT and (b) FinFETs each with a gate length of 100 nm.