Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
Mao Wei1, Wang Hai-Yong1, Shi Peng-Hao1, Wang Xiao-Fei2, †, Du Ming1, Zheng Xue-Feng1, Wang Chong1, Ma Xiao-Hua1, Zhang Jin-Cheng1, Hao Yue1
       

(color online) On-state current density distributions corresponding to the devices in Fig. 2, showing (a) two-dimensional distributions, and (b) distributions along line B1B2 as shown in Fig. 1.