Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
Mao Wei1, Wang Hai-Yong1, Shi Peng-Hao1, Wang Xiao-Fei2, †, Du Ming1, Zheng Xue-Feng1, Wang Chong1, Ma Xiao-Hua1, Zhang Jin-Cheng1, Hao Yue1
       

(color online) Schematic structures for (a) non-SJ HFET and (b) un-SJ HFET. Lines A1A2 or B1B2 denote the vertical direction at the n-pillar/p-pillar junction or the middle of the device, respectively.