Bias polarity-dependent unipolar switching behavior in NiO/SrTiO<sub>3</sub> stacked layer

Bias polarity-dependent unipolar switching behavior in NiO/SrTiO₃ stacked layer

Sun Xian-Wen, Jia Cai-Hong, Liu Xian-Sheng, Li Guo-Qiang, Zhang Wei-Feng^†

(color online) (a) Rectifying I–V curves in pristine Au/NiO/STO/Pt memory cell. Inset shows the schematic drawing of the I–V measurement. (b) Voltage sweep with 10-mA CC in smaller voltage range. Inset shows electroforming process with 1-mA CC under negative bias.