Bias polarity-dependent unipolar switching behavior in NiO/SrTiO3 stacked layer
Sun Xian-Wen, Jia Cai-Hong, Liu Xian-Sheng, Li Guo-Qiang, Zhang Wei-Feng †
       

(color online) (a) Cross-sectional SEM image of the NiO/STO thin film on Pt/TiO2/SiO2/Si substrate. (b) Energy dispersive x-ray spectra (EDS) for NiO/STO films on Pt/TiO2/SiO2/Si substrates, which exhibits atomic concentrations of four elements (Ni, Ti, Sr, and Si) with depth profiling. This figure demonstrates that thickness values of NiO and STO films are about 100 nm and 400 nm, respectively. Peak of Ti element between 0.7 μ m and 0.9 μ m represents TiO2 in Pt/TiO2/SiO2/Si substrate.