Enhanced thermoelectric properties of p-type polycrystalline SnSe by regulating the anisotropic crystal growth and Sn vacancy
Liu Chengyan1, Miao Lei1, †, Wang Xiaoyang1, Wu Shaohai1, Zheng Yanyan1, Deng Ziyang1, Chen Yulian1, Wang Guiwen2, Zhou Xiaoyuan2
       

(color online) SEM images of the fracture surface parallel to the pressing direction of SPS process: (a) 400 °C@SnSe2, (b) 600 °C@SnSe2, (c) 800 °C@SnSe2, and (d) 600 °C@SnSe.