Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Sun Ling^{1, 2}, Wang Lu¹, Lu Jin-Lei^{1, 2}, Liu Jie^{1, 2}, Fang Jun^{1, 2}, Xie Li-Li³, Hao Zhi-Biao³, Jia Hai-Qiang¹, Wang Wen-Xin¹, Chen Hong^{1, †}

(color online) (a) Atomic force microscopy (AFM) image of a 2 μ m × 2 μ m area with an RMS value of roughness of 1.59 Å, (b) three-dimensional AFM image of the grown material, and (c) x-ray diffraction pattern of InAsSb/GaSb QWs showing an antimony quantity of 8.4%, and (d) reciprocal space mapping (RSM) of InAsSb/GaSb QWs showing no lattice relaxation.