Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Sun Ling^{1, 2}, Wang Lu¹, Lu Jin-Lei^{1, 2}, Liu Jie^{1, 2}, Fang Jun^{1, 2}, Xie Li-Li³, Hao Zhi-Biao³, Jia Hai-Qiang¹, Wang Wen-Xin¹, Chen Hong^{1, †}

(color online) (a) Band structure of single 5-nm thick InAs_0.91Sb_0.09 QW embedded in GaSb bulk with a transition energy 0.53 eV ( 2.34 μ m ) from E VB to E₁. (b) Schematic diagram of the InAsSb/GaSb QWs photodetector.