Effect of depositing PCBM on perovskite-based metal–oxide–semiconductor field effect transistors
Luan Su-Zhen1, Wang Yu-Cheng2, Liu Yin-Tao2, Jia Ren-Xu2, †
       

(color online) Drain current–drain voltage curves with different gate voltages (Vg = 30 V and −30 V) for transistors (a) Au/perovskite/SiO2/Si/Al and (b) Au/PCBM/perovskite/PCBM/SiO2/Si/Al in the dark and under illumination (2 mW/cm2).