Effect of depositing PCBM on perovskite-based metal–oxide–semiconductor field effect transistors

Luan Su-Zhen¹, Wang Yu-Cheng², Liu Yin-Tao², Jia Ren-Xu^{2, †}

Drain current–gate voltage curves at V_d = -5 V in ((a) and (b)) the dark and ((c) and (d)) light condition.