Effect of depositing PCBM on perovskite-based metal–oxide–semiconductor field effect transistors
Luan Su-Zhen1, Wang Yu-Cheng2, Liu Yin-Tao2, Jia Ren-Xu2, †
       

(a) X-ray diffraction (XRD), ((b) and (c)) x-ray photoelectron spectroscopy (XPS) results, and (d) photoluminescence spectrum (PL) measurements for the perovskite films deposited on the Si/SiO2 substrate.