Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping

Chen Zhiyu¹, Wang Ruifeng^{2, 3}, Wang Guoyu^{2, 3}, Zhou Xiaoyuan⁴, Wang Zhengshang¹, Yin Cong¹, Hu Qing¹, Zhou Binqiang⁵, Tang Jun^{1, 6, ‡}, Ang Ran^{1, 6, †}

(color online) Temperature-dependent (a) electrical conductivity σ and (b) Seebeck coefficient S for all samples. (c) Carrier concentration n and effective mass m * at room temperature as a function of Zn content x. (d) Room temperature Pisarenko plot, in comparison with reported data from Refs. [30] and [31]. The solid line is based on a two-band model.^[30] (e) Temperature-dependent Hall coefficient R H and (f) power factor PF.