Passivation of carbon dimer defects in amorphous SiO<sub>2</sub>/4H–SiC (0001) interface: A first-principles study

Passivation of carbon dimer defects in amorphous SiO₂/4H–SiC (0001) interface: A first-principles study

Zhang Yi-Jie¹, Yin Zhi-Peng¹, Su Yan², Wang De-Jun^{1, †}

(color online) Structure diagrams and DOSs of the O₂– ( C = C ) ′ –O₂ defect after NO passivation, showing passivation structures of (a) ( C – C ) ′ + NO–I, and (b) ( C – C ) ′ + 2NO–I, total DOSs corresponding to (c) ( C – C ) ′ + NO–I and (d) ( C – C ) ′ + 2NO–I, PDOSs of atoms in the passivation region of (e) ( C – C ) ′ + NO–I and (f) ( C – C ) ′ + 2NO–I.