Passivation of carbon dimer defects in amorphous SiO<sub>2</sub>/4H–SiC (0001) interface: A first-principles study

Passivation of carbon dimer defects in amorphous SiO₂/4H–SiC (0001) interface: A first-principles study

Zhang Yi-Jie¹, Yin Zhi-Peng¹, Su Yan², Wang De-Jun^{1, †}

(color online) Structure diagrams and DOSs of the O₂–C = C–O₂ defect after NO passivation, showing passivation structures of (a) C–C + NO, (b) C–C + 2NO, and (c) C–C + 3NO, total DOSs of (d) C–C + NO, (e) C–C + 2NO, and (f) C–C + 3NO passivation structures, PDOSs of atoms in the passivation region of (g) C–C + NO, (h) C–C + 2NO, and (i) C–C + 3NO passivation structures.