Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: A first-principles study
(color online) (a) O2–C = C–O2 defect structure after H2 passivation, (b) its total DOS, and (c) PDOSs of atoms in the passivation region.
Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: A first-principles study |
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(color online) (a) O2–C = C–O2 defect structure after H2 passivation, (b) its total DOS, and (c) PDOSs of atoms in the passivation region. |
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