Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: A first-principles study
Zhang Yi-Jie1, Yin Zhi-Peng1, Su Yan2, Wang De-Jun1, †
       

(color online) DOSs of (a) O2–C = C–O2 defect and (b) O2– ( C = C ) ′ –O2 defect. Partial charge density diagrams of the energy band corresponding to (c) O2–C = C–O2 defect and (d) O– ( C = C ) ′ –O2 defect in energy level range of 0.6 eV–3.2 eV. Isosurface value is set to be 0.03 e/Bohr3.