Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: A first-principles study
Zhang Yi-Jie1, Yin Zhi-Peng1, Su Yan2, Wang De-Jun1, †
       

(color online) (a) DOS in amorphous SiO2/4H–SiC interface. Maximum of valence band of the SiC substrate is set to be 0 eV. The red line represents partial density of states (PDOS) of SiC substrate, and the blue line denotes the three total DOSs of the interface structure. (b) Partial charge density diagram of energy band in amorphous SiO2/4H–SiC interface in energy level range of 0 eV–0.6 eV. Isosurface value is set to be 0.03 e/Bohr3.