Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: A first-principles study
Zhang Yi-Jie1, Yin Zhi-Peng1, Su Yan2, Wang De-Jun1, †
       

(color online) (a) Interface structure of amorphous SiO2/4H–SiC. (b) Interface structure of SiO2/SiC containing a carbon dimer defect, named the O2–C = C–O2 defect. (c) Another interface structure of SiO2/SiC containing a carbon dimer defect, named the O2–(C = C)–O2 defect.