Passivation of carbon dimer defects in amorphous SiO<sub>2</sub>/4H–SiC (0001) interface: A first-principles study

Passivation of carbon dimer defects in amorphous SiO₂/4H–SiC (0001) interface: A first-principles study

Zhang Yi-Jie¹, Yin Zhi-Peng¹, Su Yan², Wang De-Jun^{1, †}

(color online) DOSs of 4H–SiC calculated (a) by standard DFT, in which the band gap is 2.2 eV, and (b) by HSE06 hybrid function, in which the band gap is 3.2 eV. The 4H–SiC band gap obtained in the experiment is 3.26 eV. Level of 0 eV is marked as valence band energy of SiC.