Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector
Li Jin-Lun
1, 2
, Cui Shao-Hui
1
, Xu Jian-Xing
2, 4
, Cui Xiao-Ran
2, 5
, Guo Chun-Yan
2, 6
, Ma Ben
2, 3
, Ni Hai-Qiao
2, 3, †
, Niu Zhi-Chuan
2, 3
(color online) Calculation results of theoretical response rate.