Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector
Li Jin-Lun1, 2, Cui Shao-Hui1, Xu Jian-Xing2, 4, Cui Xiao-Ran2, 5, Guo Chun-Yan2, 6, Ma Ben2, 3, Ni Hai-Qiao2, 3, †, Niu Zhi-Chuan2, 3
       

(color online) Carrier mobilities and carrier concentrations with different In content at 300 K and 77 K.