Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Pan Xiaoyu, Guo Hongxia^†, Luo Yinhong, Zhang Fengqi, Ding Lili

(color online) Simulation results from Gaspard et al.,^[9] which show the WPM extent versus time in an N-well with 10 μ m -spaced well contacts for two peak well doping concentrations.^[9]