Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
Pan Xiaoyu, Guo Hongxia †, Luo Yinhong, Zhang Fengqi, Ding Lili
       

(color online) Histograms of the MCUs obtained with 79Br exposure (LET : 42.0 MeV · cm 2 · mg − 1 ).