Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Pan Xiaoyu, Guo Hongxia^†, Luo Yinhong, Zhang Fengqi, Ding Lili

(color online) Histograms of the MCUs obtained with ⁴⁸Ti exposure (LET : 21.8 MeV · cm 2 · mg − 1 ).