High mobility ultrathin ZnO p–n homojunction modulated by Zn<sub>0.85</sub>Mg<sub>0.15</sub>O quantum barriers

High mobility ultrathin ZnO p–n homojunction modulated by Zn_0.85Mg_0.15O quantum barriers

Yang Jing-Jing^{1, 2}, Fang Qing-Qing^{1, †}, Du Wen-Han^{2, 3, ‡}, Zhang Ke-Ke³, Dong Da-Shun¹

The carrier transport schematic diagram of field-induced inter band tunnel effect of ADB-added ZnO p–n homojunction.