High mobility ultrathin ZnO p–n homojunction modulated by Zn
0.85
Mg
0.15
O quantum barriers
Yang Jing-Jing
1, 2
, Fang Qing-Qing
1, †
, Du Wen-Han
2, 3, ‡
, Zhang Ke-Ke
3
, Dong Da-Shun
1
(color online)
I
–
V
curves of ZnO p–n homojunctions with different conditions on Si substrates.