High mobility ultrathin ZnO p–n homojunction modulated by Zn<sub>0.85</sub>Mg<sub>0.15</sub>O quantum barriers

High mobility ultrathin ZnO p–n homojunction modulated by Zn_0.85Mg_0.15O quantum barriers

Yang Jing-Jing^{1, 2}, Fang Qing-Qing^{1, †}, Du Wen-Han^{2, 3, ‡}, Zhang Ke-Ke³, Dong Da-Shun¹

(color online) XRD pattern of ZnO/Zn_0.85Mg_0.15O ADB thin film on Si(100) substrate. Inset shows the XRD pattern at a different diffraction angle range of the same sample. The arrows marked with 1 and 1′ indicate the similarity of ZnMgO(002) and Si(400) XRD peak shapes.