Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Li Xiao-Long^{1, 2, 3}, Lu Wu^{1, 2, †}, Wang Xin^{1, 2}, Yu Xin^{1, 2}, Guo Qi^{1, 2}, Sun Jing^{1, 2}, Liu Mo-Han^{1, 2, 3}, Yao Shuai^{1, 2, 3}, Wei Xin-Yu^{1, 2}, He Cheng-Fa^{1, 2}

(color online) The base current (I_b) versus gate voltage (V_g). (a) Existence of clear base current peak and (b) conjunction of sub-threshold sweep extracted V_mg with gate sweep.