Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
Li Xiao-Long1, 2, 3, Lu Wu1, 2, †, Wang Xin1, 2, Yu Xin1, 2, Guo Qi1, 2, Sun Jing1, 2, Liu Mo-Han1, 2, 3, Yao Shuai1, 2, 3, Wei Xin-Yu1, 2, He Cheng-Fa1, 2
       

Core of proton interactions near the interface. (1) and (2) Proton release from hydrogen-containing defects, (3) depassivation of Si–H bonds (interface traps formation), (4) hydrogen dimerization reaction (formation of H2), and (5) annealing of interface traps. VH represents a hydrogen-containing defect, × represents an interface trap, O represents a Si–H bond, red arrow represents enhanced reaction, and red dashed-line arrows represents a relatively suppressive reaction. (a) Conditions at fixed temperature and (b) conditions at switched temperature.