Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

Sun Shu-Xiang¹, Wei Zhi-Chao², Xia Peng-Hui¹, Wang Wen-Bin¹, Duan Zhi-Yong¹, Li Yu-Xiao¹, Zhong Ying-Hui^{1, †}, Ding Peng³, Jin Zhi³

(color online) Plots of extrinsic transconductance versus gate-bias voltage of InP-based HEMTs after proton irradiation at different incident angles.