Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
Sun Shu-Xiang1, Wei Zhi-Chao2, Xia Peng-Hui1, Wang Wen-Bin1, Duan Zhi-Yong1, Li Yu-Xiao1, Zhong Ying-Hui1, †, Ding Peng3, Jin Zhi3
       

(color online) Variations of (a) the number of induced vacancy defects and (b)vacancy energy loss with incident angle of proton.