Enhanced radiation-induced narrow channel effects in 0.13-<inline-formula> <img src="cpb_27_2_028501_ieqn1.gif"/> </inline-formula> PDSOI nMOSFETs with shallow trench isolation

Enhanced radiation-induced narrow channel effects in 0.13-

PDSOI nMOSFETs with shallow trench isolation

Zhang Meng-Ying^{1, 2, †}, Hu Zhi-Yuan¹, Bi Da-Wei¹, Dai Li-Hua^{1, 2}, Zhang Zheng-Xuan¹

(color online) Simulated pre-radiation, charge trapped (a) only at the silicon/STI interface and (b) only at the silicon/BOX interface for W/L = 0.15/0.13.