Enhanced radiation-induced narrow channel effects in 0.13- PDSOI nMOSFETs with shallow trench isolation
Zhang Meng-Ying1, 2, †, Hu Zhi-Yuan1, Bi Da-Wei1, Dai Li-Hua1, 2, Zhang Zheng-Xuan1
       

(color online) Threshold voltage shifts of front gate transistors versus the TID for PDSOI nMOSFETs with different channel sizes.