Enhanced radiation-induced narrow channel effects in 0.13- PDSOI nMOSFETs with shallow trench isolation
Zhang Meng-Ying1, 2, †, Hu Zhi-Yuan1, Bi Da-Wei1, Dai Li-Hua1, 2, Zhang Zheng-Xuan1
       

(color online) Front gate curves of T-gate NMOS in logarithmic scale for the different-width transistors measured at low and high drain voltages ( and 1.32 V) before and after ON bias irradiation, at (a) and (b). Solid line represents low drain bias, dashed line denotes high drain bias.