Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes<xref rid="cpb_27_2_028101_fn1" ref-type="fn">*</xref><fn id="cpb_27_2_028101_fn1"><label>*</label><p>Project supported by the Science Challenge Project, China (Grant No. Z2016003), the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).</p></fn>

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes**

Project supported by the Science Challenge Project, China (Grant No. Z2016003), the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

Xing Yao^{1, 2}, Zhao De-Gang^{1, 3, †}, Jiang De-Sheng¹, Li Xiang¹, Liu Zong-Shun¹, Zhu Jian-Jun¹, Chen Ping¹, Yang Jing¹, Liu Wei¹, Liang Feng¹, Liu Shuang-Tao¹, Zhang Li-Qun⁴, Wang Wen-Jie⁵, Li Mo⁵, Zhang Yuan-Tao⁶, Du Guo-Tong⁶

(color online) (a) Threshold current (black line) and output power (red line) at 120 mA when Al composition of HBL changes from 0.15 to 0.25; (b) percentage of hole leakage current as a function of Al composition of HBL.