Magneto optical properties of self-assembled InAs quantum dots for quantum information processing Project supported by the National Basic Research Program of China (Grant No. 2014CB921003), the National Natural Science Foundation of China (Grant Nos. 11721404, 51761145104, and 61675228), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07030200 and XDPB0803), and the CAS Interdisciplinary Innovation Team. |
(color online) A schematic diagram of an n–i–Schottky device. (b) Contour plot of the PL spectra of a single QD as a function of bias voltage from −0.5 V to +0.5 V with different magnetic fields from 0 T to 9 T in Faraday geometry. (c) PL spectra of X−, X2−, and X3− as a function of applied magnetic field from 0 T to 9 T with bias voltage at −0.5 V, 0 V, and +0.5 V, respectively. (d) The integrated intensities of X−, X2−, and X3− as a function of the applied magnetic field with different bias voltages.[ |