Optically induced abnormal terahertz absorption in black silicon<xref rid="cpb_27_2_027802fn1" ref-type="fn">*</xref><fn id="cpb_27_2_027802fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11574408, 11504439, 61627814, and 61675238), the National Key Research and Development Program of China (Grant No. 2017YFB0405402), the National Instrumentation Program of China (Grant No. 2012YQ14000508), and the Young-talent Plan of State Affairs Commission, China (Grant No. 2016-3-02).</p></fn>

Optically induced abnormal terahertz absorption in black silicon**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11574408, 11504439, 61627814, and 61675238), the National Key Research and Development Program of China (Grant No. 2017YFB0405402), the National Instrumentation Program of China (Grant No. 2012YQ14000508), and the Young-talent Plan of State Affairs Commission, China (Grant No. 2016-3-02).

Zhai Dong-Wei¹, Liu Hai-Ling¹, Sedao Xxx², Yang Yu-Ping^{1, †}

(color online) Absorptions of four BS and Si wafers in the spectrum range from 620 nm to 1050 nm.