Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET*

Project supported by the National Natural Science Foundation of China (Grant No. 69901003) and the Scientific Research Fund of Sichuan Provincial Education Department.

Wang Jun1, †, Peng Xiao-Mei1, Liu Zhi-Jun2, Wang Lin1, Luo Zhen1, Wang Dan-Dan1
       

(color online) Plots of measured and calculated Sid against IDS for 40-nm n-MOSFET at VGS = 0.35 V (MI) and different temperatures.