Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET<xref rid="cpb_27_2_027201_fn1" ref-type="fn">*</xref> <fn id="cpb_27_2_027201_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 69901003) and the Scientific Research Fund of Sichuan Provincial Education Department.</p> </fn>

Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET* *

Project supported by the National Natural Science Foundation of China (Grant No. 69901003) and the Scientific Research Fund of Sichuan Provincial Education Department.

Wang Jun^{1, †}, Peng Xiao-Mei¹, Liu Zhi-Jun², Wang Lin¹, Luo Zhen¹, Wang Dan-Dan¹

(color online) Measured four noise parameters of 40-nm n-MOSFET in a frequency range of 1 GHz–60 GHz, showing plots of (a) equivalent noise resistance R_n against frequency, (b) minimum noise figure NF_min against frequency, (c) real part of optimum source admittance G_opt against frequency, (d) imaginary part of optimum source admittance B_opt against frequency.