Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET<xref rid="cpb_27_2_027201_fn1" ref-type="fn">*</xref> <fn id="cpb_27_2_027201_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 69901003) and the Scientific Research Fund of Sichuan Provincial Education Department.</p> </fn>

Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET* *

Project supported by the National Natural Science Foundation of China (Grant No. 69901003) and the Scientific Research Fund of Sichuan Provincial Education Department.

Wang Jun^{1, †}, Peng Xiao-Mei¹, Liu Zhi-Jun², Wang Lin¹, Luo Zhen¹, Wang Dan-Dan¹

Measured S parameters of 40-nm n-MOSFET in a frequency range of 1 GHz–60 GHz and with V_DS = 1.1 V and V_GS = (a) 0.18 V, (b) 0.35 V, and (c) 0.7V.