Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures<xref rid="cpb_27_2_027104_fn1" ref-type="fn">*</xref> <fn id="cpb_27_2_027104_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51002010 and 11274040).</p> </fn>

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 51002010 and 11274040).

Liu Hao-Nan¹, Suo Xiao-Xia¹, Zhang Lin-Ao¹, Zhang Duan², Wu Han-Chun¹, Zhao Hong-Kang¹, Jiang Zhao-Tan¹, Li Ying-Lan¹, Wang Zhi^{1, †}

(color online) The I–V characteristics of the Ag/ZnO/Zn/ZnO/TiN structure inserted with Zn layer in different thicknesses, the inset shows its I–V characteristics plotted in linear scale.