Thermoelectric properties of two-dimensional hexagonal indium-VA<xref rid="cpb_27_2_026802_fn1" ref-type="fn">*</xref> <fn id="cpb_27_2_026802_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900).</p> </fn>

Thermoelectric properties of two-dimensional hexagonal indium-VA* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900).

Bi Jing-Yun¹, Han Li-Hong¹, Wang Qian¹, Wu Li-Yuan¹, Quhe Ruge^{1, 2, †}, Lu Peng-Fei^{1, 3, ‡}

(color online) ZT values as a function of the carrier concentration of the In–VA monolayer at 300 K (black line), 600 K (red line), and 900 K (blue line), respectively.