Thermoelectric properties of two-dimensional hexagonal indium-VA<xref rid="cpb_27_2_026802_fn1" ref-type="fn">*</xref> <fn id="cpb_27_2_026802_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900).</p> </fn>

Thermoelectric properties of two-dimensional hexagonal indium-VA* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900).

Bi Jing-Yun¹, Han Li-Hong¹, Wang Qian¹, Wu Li-Yuan¹, Quhe Ruge^{1, 2, †}, Lu Peng-Fei^{1, 3, ‡}

(color online) Top and side views for 2D (a) planar InN and (b) buckled honeycomb InX (X = P, As, Sb, Bi) structures. In the planar structure, atoms are located on the same plane. In the buckled structure, the alternating atoms are located in two different parallel planes. The buckling Δ is the distance between these two planes. θ refers to the value of angle between neighboring bonds.