Light trapping and optical absorption enhancement in vertical semiconductor Si/SiO2 nanowire arrays
(color online) (a) SEM morphology of Si/SiO2 nanowire array with core–shell structure. (b) Schematic diagram and simulated unit of core–shell Si/SiO2 NW array modeled in this study. In this simulation, geometric parameters are selected as follows: diameter (D) of Si NW = 100 nm, length (L) of NW = 5000 nm, period (P) = 500 nm by varying the SiO2 thickness.
