Improved performance of Ge n<sup>+</sup>/p diode by combining laser annealing and epitaxial Si passivation

Improved performance of Ge n⁺/p diode by combining laser annealing and epitaxial Si passivation

Wang Chen^{1, †}, Xu Yihong², Li Cheng³, Lin Haijun¹

(color online) I–V characteristics of Ge n⁺/p junctions formed by ELA with and without Si passivation. The inset shows the diode schematic with cross-sectional view.