Improved performance of Ge n<sup>+</sup>/p diode by combining laser annealing and epitaxial Si passivation

Improved performance of Ge n⁺/p diode by combining laser annealing and epitaxial Si passivation

Wang Chen^{1, †}, Xu Yihong², Li Cheng³, Lin Haijun¹

(color online) (a) Dependence of CTLM resistance on gap spacing for Al/n⁺-Ge contacts. The inset shows the CTLM schematic structure (top view). (b) Current–voltage characteristics of Al/n-Ge contacts with and without Si passivation.