Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation
(color online) XPS spectra of germanium surface with silicon interlayer deposited at 390 °C with Si2H6 gas: (a) Si 2p, (b) Ge 3d.
Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation |
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(color online) XPS spectra of germanium surface with silicon interlayer deposited at 390 °C with Si2H6 gas: (a) Si 2p, (b) Ge 3d. |
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