Improved performance of Ge n<sup>+</sup>/p diode by combining laser annealing and epitaxial Si passivation

Improved performance of Ge n⁺/p diode by combining laser annealing and epitaxial Si passivation

Wang Chen^{1, †}, Xu Yihong², Li Cheng³, Lin Haijun¹

(color online) The typical AFM images of the samples before (a) and after (b) Si surface passivation.