Raman spectrum study of <i>δ</i>-doped GaAs/AlAs multiple-quantum wells

Raman spectrum study of δ-doped GaAs/AlAs multiple-quantum wells

Zheng Wei-Min^{1, †}, Cong Wei-Yan¹, Li Su-Mei², Wang Ai-Fang¹, Li Bin^{3, ‡}, Huang Hai-Bei⁴

(color online) (a) Peak positions of Raman shifts versus the different quantum-well widths at 4 K for samples A, B, and C. (b) Peak positions of Raman shifts for sample C as a function of the measured temperature. The inset displays the absolute value of coupling strength versus the temperature for sample C. The values of E_p, E_e and are obtained by a fit of Eq. (1) to each individual spectrum.